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Technology of the future
Samsung's flash memory is fabricated using an innovative 3D V-NAND architecture, which stacks 32 cell layers on top of one another. The result is higher density and higher performance using a smaller footprint and a breakthrough in overcoming the density limits of conventional planar NAND. You will have greater storage at a lower price.
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Achieve the maximum
Achieve incredible read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. The 850 EVO delivers class-leading performance* in sequential read (540MB/s) and write (520MB/s) speeds.
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Switch to a higher gear
Samsung’s Magician software enables RAPID Mode for up to 2x faster performance* by utilizing unused PC memory (DRAM) as a high-speed cache.
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Durability and reliability supported by 3D V-NAND technology
The disk doubles the endurance and reliability (measured in TBW) compared to the previous generations and features a class-leading 5 year warranty to guarantee durability.