The Intel DC S3700 SSD combines excellent performance with high durability and strong data security. It is an ideal storage medium for data centres, providing instant, fast, and consistent data access.
The DC S3700 drives transmit data with extremely fast, with low latency and IOPS scattering. When reading or writing a 4KB block, the drive offers a performance of up to 75,000 IOPS and 32,000 IOPS respectively. Its remarkably low performance scattering and latency provide consistent response at any moment. Combined with the drive’s low power consumption, it makes it ideal storage capacity for data centre applications.
Complete End to End protection keeps data safe from the moment they are stored on the disk and until they are removed. The drive uses an advanced error correction scheme that ensures data integrity. The scheme helps to prevent corruption of data in NAND, SRAM, and DRAM. The drive also protects data during transporting using several techniques, such as parity check, cyclic redundancy check (CRC), and LBA verification tag.
Once a fault is detected, the drive immediately attempts to repair it. In the event that the error is impossible to fix, it is reported to the host. The disk also contains plenty of spare memory used for temporary data storage in order to reduce the potential loss.
The Intel DC S3700 SSD supports 256-bit AES encryption algorithm (Advanced Encryption Standard) to secure data against theft or unauthorised access.
There is also a system for reducing potential data loss caused by unpredictable power outages. The system works on the basis that all data in the buffer are automatically backed up before the drive shuts down.
The disk uses an advanced High Endurance Technology (HET) memory cell system. It adopts the features of single-level cell (SLC) SSDs and utilises them in cheaper MLC. Thanks to HET you can rewrite the whole drive 10x every day (DWPD) and it will still last you 5 years at the minimum.
Specifications:
Components:
Intel 25nm NAND Flash
High Endurance Technology (HET) Multi-Level Cell (MLC)
Performance:
Capacity: 200 GB
Random read/write 4 kB: 75,000/32,000 IOPS
Sequential read/write: 500/365 MB/s
Read/write latency: 50/65 microseconds
Other:
Mean time between failure (MTBF): 2,000,000 hours
| Code: | NR111q2 |
| Product Number: | SSDSC2BA200G301 |
| Links: | Producer's Website: |